CHARGED BEAM EXPOSURE APPARATUS, OPTICAL EXPOSURE METHOD USING CHARGED BEAM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE OPTICAL EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a charged beam exposure apparatus and an optical exposure method which markedly reduces the influence of a space charge effect and therefore has small aberration.;SOLUTION: The charged beam exposure apparatus 1 comprises an electron gun 11 for producing a charged beam 8 with low acceleration to be free of the influence of a proximity effect, illumination lens system 15, a cell aperture 19, deflection systems 17 and 21 which deflect the charged beam 8 by an electric field and then make it incident into a desired cell pattern of the cell aperture 19, and thereafter, bend the charged beam 8 which has passed through them back on the optical axis, a reduction projection optical system 23 (Q1-Q4) which reduces the charged beam 8 which has passed through the deflection system 21 by an electric field to make it form an image on a wafer 14, and deflection systems 25 and 31 which deflect the charged beam 8 by an electric field and scan the beam over the wafer 14. The charged beam exposure apparatus 1 also comprises illumination position adjusting means 40-48 which adjust the illumination position of the charged beam 8 so that the charged beam 8 incident into the reduction projection optical system moves on a trajectory symmetric with respect to an optical axis in one of two planes which cross each other at right angles on the optical axis.;COPYRIGHT: (C)2004,JPO