HOLLOW APERTURE, CHARGED PARTICLE BEAM EXPOSURE APPARATUS, METHOD OF ALIGNING BEAM POSITION IN CHARGED PARTICLE BEAM EXPOSURE APPARATUS, METHOD OF ADJUSTING CHARGED PARTICLE BEAM DOSE, METHOD OF ADJUSTING GENERATION SOURCE OF CHARGED PARTICLE BEAM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a hollow aperture that can be easily aligned to the center position of a charged particle beam. ;SOLUTION: A circular thick part 1b (thickness 2 m-200 m) is formed at the center of the hollow aperture 1. In the thick part 1b, absorption, scattering, and reflection of an electron beam 2 are particularly high. Absorption of an electron beam by the hollow aperture 1 causes a current flow, which is detected by an ampere meter 4. Since the electron beam incident to the hollow aperture 1 has a Gaussian distribution, or at least an axially symmetrical distribution having the current which is stronger in the center than in its surroundings, the detected current from the hollow aperture 1 becomes maximum, when the center of the thick part 1b and the center of the electron beam coincide. Consequently, if the position of the electron beam 2 is so adjusted by an aligner 5 for beam position adjustment as to maximize the current detected by the ampere meter 4, it is possible to align the center position of the hollow aperture 1 to the beam position of the electron beam 2.;COPYRIGHT: (C)2001,JPO