SUBSTRATE-DRYING APPARATUS AND METHOD AND SILICON OXIDE FILM REMOVAL METHOD OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To prevent the generation of a water mark during dry treatment in substrate-drying apparatus for drying a substrate, where treatment liquid such as demineralized water and rinse adheres to the upper surface of the substrate in the shape of a liquid film.;SOLUTION: In the first half of dry treatment, nitrogen gas is sprayed to the upper surface center section of a substrate for forming a hole. then, the speed P1 of the substrate is set to a critical speed PT or lower, thus preventing treatment liquid from flowing down from a substrate end edge section merely by centrifugal force with substrate rotation, at the same time, further spraying the nitrogen gas to the upper surface center section of the substrate for expanding the hole in the end edge direction of the substrate, and gradually pushing the treatment liquid at the center side of a liquid film to the substrate end edge side for expanding a dry area. As a result, droplets do not remain at the upper surface center section of the substrate, and generation of watermarks is prevented.;COPYRIGHT: (C)2003,JPO