amp;beta;-FeSi2 AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT CONTAINING amp;beta;-FeSi2

摘要

PROBLEM TO BE SOLVED: To provide high quality β-FeSi₂ having high crystal property which is formed on any surface part of an Si substrate without needing of a large-scale apparatus, and a semiconductor integrated circuit containing β-FeSi₂.;SOLUTION: The Raman strength of β-FeSi₂ which is measured at room temperature by Ar ion laser of 514.5 nm wave length as a light source for excitation, is 30% or more than that of Si as a substrate of β-FeSi₂.;COPYRIGHT: (C)2003,JPO