METHOD FOR FORMING amp;beta;-FeSi2 AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method or the like for easily forming a β-FeSi₂ single phase film on an Si substrate to fabricate an optoelectronic device or the like on the Si substrate with extremely high versatility as the substrate of various electronic devices, while having simple principles.;SOLUTION: In a β-FeSi₂ formation method, β-FeSi₂ is formed on an Si substrate 22 by bringing molten salt 23 containing an Fe element into contact with the Si substrate 22. As one embodiment of this, there is mentioned the β-FeSi₂ formation method of forming β-FeSi₂ by the reaction shown by formula (1):5Si+2FeCl₂=2β-FeSi₂+SiCl₄.;COPYRIGHT: (C)2008,JPO&INPIT