Microelectronic fabrication with upper lying aluminum fuse layer in copper interconnect semiconductor technology and method for fabrication thereof

摘要

Within both a microelectronic fabrication and a method for fabricating the microelectronic fabrication, there is employed at least one fuse layer electrically connected with a series of patterned conductor layers separated by a series of dielectric layers, where the at least one fuse layer is formed at a level no lower than a highest of the series of patterned conductor layers within the microelectronic fabrication. When formed within the context of the foregoing constraint, there is provided enhanced access for actuation of the at least one fuse layer within the microelectronic fabrication.