首页>
外国专利>
Indium aluminum nitride based light emitter active layer with indium rich and aluminum rich areas
Indium aluminum nitride based light emitter active layer with indium rich and aluminum rich areas
展开▼
机译:具有富铟和富铝区域的基于氮化铝铟的发光体有源层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A nitride compound semiconductor light-emitting device having a stack of layers including an active layer for a light emitting device and a method of manufacturing the device is disclosed. The method includes the steps of growing a first layer on a substrate at a first temperature to obtain an incomplete crystalline structure including both indium and aluminum and having the composition expressed as InXAlYGa1−X−YN (0≦X≦1, 0≦Y≦1). The method grows a cap layer on the first layer to cover the first layer, with growth of the cap layer proceeding at a second temperature substantially equal to or below the first temperature. The first layer is heat treated at a third temperature above the first temperature to cause the incomplete crystalline structure to crystallize and to create areas of differing compositions, thus changing the first layer to an active layer. The material of the cap layer is selected to be heat stable during the heat-treating step.
展开▼
机译:公开了具有包括用于发光器件的有源层的层的堆叠的氮化物化合物半导体发光器件及其制造方法。该方法包括以下步骤:在第一温度下在衬底上生长第一层,以获得包括铟和铝两者并且具有表示为In X Sub> Al Y 组成的不完全晶体结构。 Sub> Ga 1&min; X&min; Y Sub> N(0lE; X≦ 1、0lE; Y≦ 1)。该方法在第一层上生长覆盖层以覆盖第一层,其中覆盖层的生长在基本等于或低于第一温度的第二温度下进行。在高于第一温度的第三温度下对第一层进行热处理,以使不完全的晶体结构结晶并形成具有不同组成的区域,从而将第一层改变为活性层。选择覆盖层的材料在热处理步骤期间是热稳定的。
展开▼