High-voltage high-speed SOI MOSFET

摘要

A semiconductor device including an SOI substrate; a plurality of diffusion regions in substrate, separated by, and abutting a plurality of body regions in said substrate, a first one of the body regions and its abutting diffusion regions having a first width and successive ones of the body regions and their abutting diffusion regions having successively smaller widths; and a plurality of gates each over one of the plurality of body regions and separated from the body regions by a dielectric material, said plurality of gates connected to a common voltage terminal.