Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates

摘要

A method of fabricating a silicon wafer, which includes the steps of preparing a silicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in a diffusion furnace having an ambience of one of Ar, N₂ and inert gas including Ar and N₂, pre-heating and maintaining the diffusion furnace at about 500° C., changing the ambience into one of H₂, Ar and inert gas including H₂ and Ar successively, increasing a temperature of the diffusion furnace by a temperature-increasing speed of 50˜70° C./min between 500˜800° C., 10˜50° C./min between 800˜900° C., 0.5˜10° C./min between 900˜1000° C., and 0.1˜0.5° C./min between 1000˜1250° C., maintaining the diffusion furnace at 1200˜1250° C. for 1˜120 min, changing the ambience inside the diffusion furnace into one of Ar, N₂ and inert gas ambience including Ar and N₂ successively, and decreasing the temperature of the diffusion furnace down to 500 ° C. by a temperature-decreasing speed of 0.1˜0.5° C./min between 1000˜1250° C., 0.5˜10° C./min between 900˜1000° C., 10˜50° C./min between 800˜900° C., and 50˜70° C./min between 500˜800° C.