Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light

摘要

A method of detecting defects in a semiconductor device by providing the semiconductor device with an electron-generating photodiode region to be used as a circuit stimulus in response to incident light, and also with conductive paths connecting the photodiode electron-generating region to terminals of polysilicon gate areas. The photodiode region of the semiconductor device is illuminated with light to stimulate the semiconductor device, and light emitted therefrom is detected. The semiconductor device can consist of a silicon chip, particularly a polysilicon gated field effect transistor silicon chip, wherein the photodiode electron-generating region possesses a diffused region therein.