etching of silicon using a porous silicon fabrication technique based on a chemical attack in the vapour phase.the technology and its application, especially in the production of a semiconductor assembly or components.

摘要

the present invention relates to a technique for the manufacture of printing devices based on semiconductor (silicon).the technique of etching is conducted through the processing of porous silicon films.chemical attack is carried out by the vapour phase (acpv). a new phase of the chemical formula (nh4) 2 sif6 highly soluble in water, comprising single crystal silicon luminescence.the reactor was constructed, and the cilicim attack by acid vapor is derived from a mixture of hf / hno3.this new technology allows to control the depth of the silicon etching of all types.this technique is characterized by its poor implementation, adaptation to cover large areas and large scale production.it would therefore be very promising for the manufacturing of compsants semiconductors and solar cells.