Method For crystallizing Polysilicon Method For Fabricating Polysilicon Thin Film Transistor And Liquid Crystal Display Device By Said Method

摘要

PURPOSE: A poly silicon crystallization method and methods for fabricating a poly silicon TFT and an LCD are provided to artificially control the distribution of polycrystalline grains of a predetermined orientation by properly controlling the orientation of self ion implantation. CONSTITUTION: A poly silicon crystallization method includes the steps of forming a silicon layer(22) on a buffer oxidation film(21) on a substrate(20), growing a micro poly silicon layer having a preferred orientation(2,2,0), inducing a grain boundary of a predetermined orientation by the self ion implantation method for silicon ions to the silicon layer, and crystallizing the silicon layer by excimer laser annealing.