METHOD FOR CRYSTALLIZING POLYSILICON, METHOD FOR FABRICATING POLYSILICON THIN FILM TRANSISTOR USING THE SAME, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY

摘要

A polysilicon layer (23) is formed on a substrate (20). The grains of the polysilicon layer except the grains having specific orientation are made amorphous, and the polysilicon layer is crystallized using the grains having the specific orientation. Independent claims are also included for the following: (1) fabrication of polysilicon thin film transistor; and (2) fabrication of liquid crystal display.