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- SUPPRESSION OF N-TYPE AUTODOPING IN LOW-TEMPERATURE SI AND SIGE EPITAXY
- SUPPRESSION OF N-TYPE AUTODOPING IN LOW-TEMPERATURE SI AND SIGE EPITAXY
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机译:-抑制低温SI和SIGE外延中的N型自掺杂
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摘要
A method of manufacturing a semiconductor device, the at least one stack comprising a layer of the different layers are trailing n- type doped semiconductor material of the semiconductor material includes a step of growing by epitaxy, the stack is a constant manufacturing methods are grown in the growth cycle.
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