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Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy
Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy
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机译:低温Si和SiGe外延中n型自掺杂的抑制
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摘要
A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in one continuous cycle.
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