Indium oxide powder manufacturing method thereof and manufacturing method of high density indium tin oxide target using the same

摘要

PURPOSE: In2O3 powder used in manufacturing high density ITO target required for vacuum depositing high quality transparent electrode layer of display device such as LCD, EL and FED devices, a manufacturing method thereof, and a manufacturing method of high density ITO (indium tin oxide) target using the same are provided. CONSTITUTION: The In2O3 powder is characterized in that surface area measured by BET method is 5 to 18 m¬2/g, and particle size measured by BET method is 40 to 160 nm. In a method for manufacturing In2O3 powder by precipitation after adding precipitant to an indium solution, the manufacturing method of In2O3 powder comprises the steps of obtaining the indium solution by dissolving indium metal into acid or dissolving indium contained salt into water; obtaining In(OH)3 precipitate by adding basic precipitant to the indium solution having an initial indium ion concentration of 2 to 5 M in a rate of 0.5 to 4 L/min as controlling pH of the solution to 5 to 9; and manufacturing In2O3 powder by calcining the obtained precipitate at a temperature of 600 to 1,100 deg.C, wherein the indium contained salt is InCl3 or In(NO3)3, wherein the basic precipitant is NH4OH, NH3 gas, NaOH, KOH, NH4HCO3, (NH4)2CO3 or a mixture thereof, and wherein the method further comprises the steps of washing the precipitate with water and drying the washed precipitate before calcining the precipitate. The manufacturing method of indium tin oxide (ITO) target comprises the process of sintering the molded material after molding a mixture of 80 to 95 wt.% of In2O3 powder in which surface area measured by BET method is 5 to 18 m¬2/g, and particle size measured by BET method is 40 to 160 nm, and 5 to 20 wt.% of SnO2 powder in which surface area measured by BET method is 1 to 16 m¬2/g.