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SEMICONDUCTOR MEMORY DEVICE WITH CAPACITORS FORMED ABOVE AND BELOW MEMORY LOCATION TRANSISTOR (ALTERNATIVES) AND ITS MANUFACTURING PROCESS
SEMICONDUCTOR MEMORY DEVICE WITH CAPACITORS FORMED ABOVE AND BELOW MEMORY LOCATION TRANSISTOR (ALTERNATIVES) AND ITS MANUFACTURING PROCESS
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机译:具有位于上方和下方的存储器定位晶体管(替代品)的电容器的半导体存储器及其制造过程
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摘要
FIELD: dynamic random-access memory devices. SUBSTANCE: memory device has first and second transistors formed on first layer; first storage electrode connected to first transistor and made under first layer; and second storage electrode connected to second transistor and made under first layer. First and second storage electrodes are connected to each source through spacer formed on side walls of each source; some spots between storage electrodes and transistors are etched. Proposed design ensures twice as large and still larger memory capacity. EFFECT: enlarged memory capacity, enhanced stability of transistor characteristics, reduced channel contraction effect. 16 cl, 10 dwg
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