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Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes
Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes
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机译:制造包括存储单元选择晶体管和具有金属电极的电容器的半导体存储装置的方法
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摘要
A technique is provided which is capable of forming a Ru film constituting a lower electrode of an information storing capacitive element in an aperture with high precision. After a Ru film is deposited, heat treatment is performed in a reducing atmosphere on a side wall and a bottom portion of a deep aperture in which the information storing capacitive element is formed. The deposition and heating of Ru films can be repeated to form a laminated structure of Ru films. As a result, it is possible to effectively remove impurities included in the Ru film, and to achieve fineness of the Ru film.
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