Manufacturing method of a semiconductor device including a nonvolatile memory having a plurality of memory cells including a selection transistor and a memory transistor

摘要

Selection gate 1 is provided with selection transistors t1 and a floating gate , ( 2 ) and a control gate ( 3 ) memory transistor having a ( t2 ) including a plurality of memory cells ( mij ) is provided non-volatile memory and manufacturing method of a semiconductor device with . Semiconductor substrate 10 ) in a plurality of active semiconductor region a field oxide layer 12 ) in be separated from each other so as to form a . Then , surface 11 on the gate oxide film 14 and a conductive material of the first layer is formed by etching , selection gate 1 is formed a . Succeedlngly , surface so as to cross with the extending in a selection gate on the wall of the insulating material is provided with a . Selection gate and a gate oxide is adjacent to each other tunnel oxide film ( 18 ) with . The conductive material and the second layer 21 and the middle dielectric layer ( 25 ) and a conductive material the third layer 26 and depositing a . The third layer in the control gate ( 3 ) is selected on the gate extended and adjacent to each other so as to form a . Succeedlngly a control gate is used as a mask of the conductive material in second layer 2 is a floating gate etching a . By this method a selection gate thicker than the second conductive material depositing a layer of . , the intermediate dielectric layer and a conductive material of a third layer is deposited and before depositing the second layer for flattening . The memory cell is small and can be manufactured .