STATIC SEMICONDUCTOR MEMORY DEVICE INCLUDING A BIPOLAR TRANSISTOR IN A MEMORY CELL, SEMICONDUCTOR DEVICE INCLUDING BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING BIPOLAR TRANSISTORS

摘要

An object of the present invention is to realize low power supply potential without causing latch up and increase in area. According to the present invention, a memory cell includes bipolar transistors BP1 and BP2 in addition to driver transistors Q1 and Q2, access transistors Q3 and Q4, and load elements L1 and L2. As a result, the static noise margin increases. The emitter of the bipolar transistor BP1 is formed in one of the source / drain regions of the access transistor Q3, the collector of the bipolar transistor BP1 is the back gate terminal of the access transistor Q3, / Drain region functions as the base of the bipolar transistor BP1.