Production of a p-channel field effect transistor on a semiconductor substrate comprises doping the substrate with donators to form an n-doped sink, thermally oxidizing to form a thin oxide layer on the substrate, and further processing

摘要

Production of a p-channel field effect transistor on a semiconductor substrate (10) comprises doping the substrate with donators using a first implantation to form an n-doped sink (70), thermally oxidizing to form a thin oxide layer (30) on the surface of the substrate, depositing a first layer (40) made from an n-doped polysilicon, p-doping the first layer with boron or boron fluoride particles, lithographically projecting and etching to remove the first layer, doping the substrate with acceptors using a second implantation (140) to form a p-doped source region, and subjecting the substrate to an elevated temperature. Preferred Features: The step of p-doping the first layer with boron or boron fluoride is carried whilst the first layer is deposited. The first layer is p-doped using a third implantation after depositing the fist layer.