Production of column regions in semiconductor wafers used in the production of high voltage transistors comprises depositing alternating n-doped and p-doped epitaxial layer sections on a semiconductor substrate, and further processing

摘要

Production of column regions (S) having a first conductivity type (n) in semiconductor wafers comprises depositing alternating n-doped and p-doped epitaxial layer sections (11, 12) on a semiconductor substrate (10), forming a topology step in or on the epitaxial layers (12), and converting the p-doped layers into n-doped layer sections using high energy implantation. Independent claims are also included for the following: (1) Trench transistor arrangement containing the doped column regions; and (2) Transistor array containing trench transistor arrangements.