Activation of acceptors in buried gan - layers from the p - type

摘要

In order to hydrogen from a buried semiconductor - p - layer of a group - iii - nitride to diffuse out, the wafer is etched trenches in order to form the p - layer, in order to expose the sides of the p - layer. After the etching, the wafer is annealed. The duration and temperature of the annealing process depend on the mutual spacing of the exposed sides of the p - layer and the thickness of the p - layer. The hydrogen diffuses easily by the p - layer and from the exposed sides by means of the trenches out. The result is a buried p - layer, the more conductive than when the trenches in front of the annealing process would have been formed. In another embodiment, a surface of an acceptor doped group - iii - v - p - layer with a superposed n - covers the layer. A part of the n - layer is etched, in order to the surface of the p - layer to expose. Thereafter, a annealing process is then carried out, in order to hydrogen from the exposed surface of the p - layer diffuse to the conductivity of the p - layer to increase.