首页> 外国专利> METHOD FOR TESTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE CONSTITUTED TESTABLE USING THE METHOD, METHOD FOR TESTING SEMICONDUCTOR MEMORY, AND THE SEMICONDUCTOR MEMORY CONSTITUTED TESTABLE USING THE METHOD

METHOD FOR TESTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE CONSTITUTED TESTABLE USING THE METHOD, METHOD FOR TESTING SEMICONDUCTOR MEMORY, AND THE SEMICONDUCTOR MEMORY CONSTITUTED TESTABLE USING THE METHOD

机译:用于测试半导体装置的方法,使用该方法构成的半导体装置的可测试表,用于测试半导体存储器的方法以及使用该方法进行的半导体存储器构成的可测试的表

摘要

PROBLEM TO BE SOLVED: To provide a method for testing a semiconductor device, by which a precise test corresponding to an actual using state can be performed to an accelerated semiconductor device, even if using a testing device of slow operation which is used conventionally.;SOLUTION: By a method for testing the semiconductor device (1) for testing the operation of the semiconductor device (1) and an internal circuit (2) using an external synchronization signal (S1) and an external input signal (S3) to be applied from the outside of the semiconductor device (1), the external synchronization signal (S1) is multiplied to be converted into an internal synchronization signal (S2); the external input signal (S3) is converted to an internal input signal (S4); and the operation of the internal circuit (2) is tested, by using these internal synchronization signal (S2) and the internal input signal (S4).;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种测试半导体装置的方法,通过该方法,即使使用常规使用的慢速操作的测试装置,也可以对加速的半导体装置进行与实际使用状态相对应的精确测试。解决方案:通过一种使用待施加的外部同步信号(S1)和外部输入信号(S3)来测试半导体器件(1)和内部电路(2)的方法来测试半导体器件(1)从半导体器件(1)的外部,将外部同步信号(S1)相乘以转换为内部同步信号(S2);外部输入信号(S3)被转换为内部输入信号(S4);并使用这些内部同步信号(S2)和内部输入信号(S4)来测试内部电路(2)的操作。;版权:(C)2004,JPO

著录项

  • 公开/公告号JP2004178739A

    专利类型

  • 公开/公告日2004-06-24

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20020345677

  • 发明设计人 MATSUNAGA YOICHI;

    申请日2002-11-28

  • 分类号G11C29/00;G01R31/28;G01R31/3183;H01L21/822;H01L27/04;

  • 国家 JP

  • 入库时间 2022-08-21 23:31:16

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