Dry isotropy removal of inorganic acid resisting coating after the poly- gate etching

摘要

Conductor structure (10) the various methods of producing are offered. In one aspect, the 1st work piece (12) conductor structure (10) the method of producing is offered on. The silicon membrane (20) the 1st work piece (12) it is formed on. Acid resisting coating (22) the silicon membrane (20) it is formed on. The mask (24) acid resisting coating (22) it is formed on the 1st part, as for the 2nd part of acid resisting coating the mask do, it is left. Acid resisting coating (22) the 2nd part and the silicon membrane (20) is etched. The mask (24) is removed, acid resisting coating (22) is removed by isotropy plasma etching. With the use of isotropy etching for acid resisting coating removal, the thermal shock which accompanies hot acid tank acid resisting coating removal is cancelled.