Dry Strip Removal of Si-Containing Anti-Reflective Coating Photo Resist Stacks

摘要

This paper reports the dry strip process developed for a downstream microwave asher to remove the multi-layer stack which includes a Si-containing Anti-Reflective Coating (SiARC) layer. Demonstrated in process tests, development focused on high selectivity of organic material removal over Si-containing layers by using an oxygen free chemistry. A residue free oxide surface, was also achieved, by alternating the plasma chemistry during the dry strip process. Selection of appropriate plasma chemistry for removal of each film was integral to the development of the entire removal process.