To provide a crystal growth method of a compound semiconductor in MOVPE growth that can be fabricated GaAs / InGaP / GaAs interface GaAs / InGaP, or InGaP / GaAs in steep MOVPE growth. In the manufacturing method of the GaAs / InGaP / GaAs interface in MOVPE growth, a step of causing the GaAs growth by the reaction by feeding the reaction tube with Ga-based gas and As-based gas, to turn off the Ga-containing gas, in the Ga a step of a step to eliminate the droplets, in advance, is supplied to the reaction tube Ga-containing gas, do GaAs of the surface excess As with the Ga, In and at a predetermined time after the introduction of the Ga-containing gas a step of introducing the system gas, causing the InGaP growth and reacted by supplying the reaction tube P-based gas with a predetermined time further step to be fed longer reaction tube only P-based gas in the InGaP growth step and is subjected to a step after turning off the P-containing gas, is supplied to the reaction tube Ga-containing gas in advance, to perform the GaAs growth by the reaction by feeding the reaction tube the As-based gas after a predetermined time.
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