SUBSTRATE USED FOR CRYSTAL GROWTH OF NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND METHOD FOR CRYSTAL GROWTH OF NITRIDE-BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a substrate used for crystal growth of a nitride-based compound semiconductor, which can make the crystal quality of the target nitride-based compound semiconductor uniform in a surface of a substrate by reducing generation of a distribution of growth temperature in the surface of the substrate; and to provide a method for crystal growth of the nitride-based compound semiconductor.;SOLUTION: The substrate used for crystal growth of the nitride-based compound semiconductor is characterized by having an infrared absorption layer 2, e.g. a carbon film on a surface of a substrate 1 for crystal formation, e.g. an Si(111) substrate on the opposite side to a side where crystal growth is made.;COPYRIGHT: (C)2010,JPO&INPIT