Crystal growth apparatus, the nitride-based compound semiconductor crystal and a method of manufacturing a nitride-based compound semiconductor crystal

摘要

Crystal growth apparatus which can be useful in growing a nitride semiconductor crystal by hydride vapor phase epitaxy, it is possible to effectively prevent breakage of the reaction tube, to grow a high quality nitride-based semiconductor single crystal, the providing a nitride-based compound semiconductor crystal, and a method of producing a nitride-based compound semiconductor crystal using the crystal growth apparatus. In the crystal growing apparatus of the horizontal type by using hydride vapor phase epitaxy to grow a nitride compound semiconductor crystal on a base substrate, the side which is disposed the source gas supply pipe the reaction tube (11) (14, 15) end of the (upstream flange 11a), during (substrate holder 13), I provided plurality of partition plates for partitioning in the axial direction the reaction tube (20) installation position of the underlying substrate.