Initial Stages of Nanocrystal Growth of Compound Semiconductors on Si Substrates

摘要

We grew compound semiconductor nanocrystals on passivated Si surfaces, which were characterized by photoelectron spectroscopy and RHEED (reflection high energy electron diffraction). The Ga-deposited Si(111) surface with a 1 x 1 RHEED pattern was significantly converted into GaSb nanocrystals by Sb beam irradiation at 500℃. In order to grow better quality GaSb nanocrystals, Se-terminated Si surfaces were employed, and about 20 nm uniform GaSb nanocrystals were grown, whose crystallinity of good quality was verified by cross-sectional TEM. For InAs nanocrystals, hydrogen-terminated Si surfaces are suitable for growth at as low substrate temperature as 300℃.