MOVPE GROWTH APPARATUS AND METHOD FOR GROWING COMPOUND SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide an MOVPE growth apparatus capable of keeping mirror surface state without contaminating the surface condition of an epitaxial wafer after growing, and to provide a method for manufacturing the same.;SOLUTION: To remove a residual gas or particles left within a reaction furnace after growth of a group III-V compound semiconductor crystal, a large quantity of high-temperature inert gas is introduced into the reaction furnace, and then the growth sequence of semiconductor crystal is started.;COPYRIGHT: (C)2006,JPO&NCIPI