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LVDS driver in bipolar and MOS technology

机译:采用双极和MOS技术的LVDS驱动器

摘要

A circuit arrangement for an LVDS driver, which uses combined bipolar and MOSFET technology with at least two MOSFETs, is shown, wherein a multiplier circuit is connected to an output stage of the LVDS driver and the multiplier circuit is controlled by means of an automatic control circuit, which generates control signals for controlling a current source of the multiplier circuit and for controlling the amplification factor of differential input signals of the multiplier circuit. Advantages of the invention are that it enables said technology, in which semi-conductor components are used in bipolar techniques (e.g. NPN and/or PNP transistors) (as well as MOS technology), to take advantage of the high speed of the bipolar elements compared with MOS elements.
机译:示出了用于LVDS驱动器的电路布置,该电路布置使用组合的双极和MOSFET技术以及至少两个MOSFET,其中,将乘法器电路连接到LVDS驱动器的输出级,并且通过自动控制来控制乘法器电路。电路,其产生用于控制乘法器电路的电流源和用于控制乘法器电路的差分输入信号的放大率的控制信号。本发明的优点在于,它使得所述在双极技术中使用半导体元件(例如NPN和/或PNP晶体管)(以及MOS技术)的技术能够利用双极元件的高速优势。与MOS元件相比。

著录项

  • 公开/公告号US6791377B2

    专利类型

  • 公开/公告日2004-09-14

    原文格式PDF

  • 申请/专利权人 ALCATEL;

    申请/专利号US20030435389

  • 申请日2003-05-12

  • 分类号H03B10/00;H03B30/00;

  • 国家 US

  • 入库时间 2022-08-21 23:19:17

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