首页>
外国专利>
Method to reduce charge interface traps and channel hot carrier degradation
Method to reduce charge interface traps and channel hot carrier degradation
展开▼
机译:减少电荷界面陷阱和沟道热载流子降解的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Using deuterium oxygen during stream oxidation forms an oxidizing vapor. Since deuterium is chemically similar to hydrogen, the oxidation process takes place normally and the silicon-silicon oxide interface is concurrently saturated with deuterium. Saturating the interface with deuterium reduces the interface trap density thereby reducing channel hot carrier degradation.
展开▼