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Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

机译:雪崩光电二极管中被困载流子的光电离,以减少盖格模式光子计数期间的脉冲后脉动

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We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

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