METHOD FOR REDUCING DEGRADATION OF HOT CARRIERS OF CHANNEL AND INTERFACE TRAP OF ELECTRIC CHARGE

摘要

PROBLEM TO BE SOLVED: To provide a method for reducing concentration of an interface level by controlling the interface level to be the energy level, related to a dangling bond interacts, with silicon for mutual interaction with an inversion layer 70. SOLUTION: A deuterium oxide is used in vapor oxidizing to form a vapor oxide. Since the deuterium resembles hydrogen chemically, an oxidizing process always occurs, and a silicon-silicon oxide interface is saturated with the deuterium at the same time. When the interface is saturated with the deuterium, trap density at the interface is decreased, resulting in reduced degradation of hot carrier of a channel. The method includes such steps as flowing of oxygen by a first amount, flowing of deuterium by a second amount to form a vapor oxide with the oxygen of the first amount, inserting of a silicon substrate comprising an upper surface into the vapor oxygen, and raising the temperature of the silicon substrate in the vapor oxide to form a dielectrics layer on the upper surface.