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Fully depleted SOI transistor with elevated source and drain
Fully depleted SOI transistor with elevated source and drain
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机译:具有耗尽的源极和漏极的全耗尽SOI晶体管
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摘要
A method of manufacturing an integrated circuit utilizes a thin film substrate. The method includes providing a mask structure on a top surface of the thin film, depositing a semiconductor material above the top surface of the thin film and the mask structure, removing the semiconductor material to a level below the top surface of the mask structure, siliciding the semiconductor material, and providing a gate structure in an aperture formed by removing the mask structure. The transistor can be a fully depleted transistor having material for siliciding source and drain regions.
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