REDUCTION OF REVERSE SHORT CHANNEL EFFECTS

摘要

A process for manufacturing a semiconductor device having a gate formed on, and diffusion regions formed in, a semiconductor substrate, the process comprising: prior to the formation of said gate, blanket implanting a neutral dopant into said semiconductor substrate at an energy dose sufficient to implant said neutral dopant at a depth greater than a depth of said diffustion regions; wherein said neutral dopant is further implanted to form a peak concentration at about 0.15 to about 0.50 microns deep.