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Magnetoresistance effect film and magnetoresistance effect type head

机译:磁阻效应膜和磁阻效应型磁头

摘要

A spin valve type magnetoresistance effect film (3) comprises a magnetic multilayered film (1) including a non-magnetic metal layer (30), a ferromagnetic layer (40) formed on one surface of the non-magnetic metal layer, a soft magnetic layer (20) formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer (50) which is formed on a surface of the ferromagnetic layer remote from a surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer. The antiferromagnetic layer contains oxygen as impurities and a concentration of oxygen contained in the antiferromagnetic layer is set to 1 to 2,000 atomic ppm. With this arrangement, there can be provided a magnetoresistance effect film having a high-quality antiferromagnetic layer which is excellent in thermal stability, sufficiently high in blocking temperature and highly excellent in pinning effect. Further, there can be provided a magnetoresistance effect type head (150) which is excellent in thermal stability, high in magnetic field sensitivity and large in MR change ratio. IMAGE
机译:自旋阀型磁阻效应膜(3)包括磁性多层膜(1),该磁性多层膜(1)包括非磁性金属层(30),在非磁性金属层的一个表面上形成的铁磁性层(40),软磁性层(20)形成在非磁性金属层的另一个表面上,并且反铁磁性层(50)形成在铁磁性层的远离其邻接非磁性金属层的表面的表面上以固定铁磁层的磁化方向。反铁磁性层包含氧作为杂质,并且反铁磁性层中包含的氧的浓度设定为1至2,000原子ppm。通过这种布置,可以提供具有高质量反铁磁层的磁阻效应膜,该反铁磁层具有优异的热稳定性,足够高的阻断温度和非常优异的钉扎效应。另外,可以提供热稳定性优异,磁场灵敏度高,MR变化率大的磁阻效应型头(150)。 <图像>

著录项

  • 公开/公告号EP0883196B1

    专利类型

  • 公开/公告日2004-07-28

    原文格式PDF

  • 申请/专利权人 TDK CORPORATION;

    申请/专利号EP19980100533

  • 发明设计人 ARAKI SATORU;NOGUCHI KIYOSHI;

    申请日1998-01-14

  • 分类号H01L43/10;G11B5/39;H01F10/08;

  • 国家 EP

  • 入库时间 2022-08-21 22:58:08

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