首页> 外国专利> THERMAL ANNEAL METHOD OF MAGNETIC TUNNEL JUNCTION, AND MAGNETIC TUNNELING JUNCTION FABRICATED BY THE METHOD

THERMAL ANNEAL METHOD OF MAGNETIC TUNNEL JUNCTION, AND MAGNETIC TUNNELING JUNCTION FABRICATED BY THE METHOD

机译:磁隧道结的热退火方法及通过该方法制造的磁隧道结

摘要

A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer (15), a tunnel barrier (16) formed at an upper surface of the first magnetic layer and a second magnetic layer (17) formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds SIMILAR 10 minutes at a temperature of 200 SIMILAR 600 DEG C to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing. IMAGE
机译:磁性隧道结的制造方法包括以下步骤:形成构造为具有第一磁性层(15),在第一磁性层的上表面形成的隧道势垒(16)和第二磁性层的磁性隧道结( 17)形成在隧道屏障的上表面;在200至600℃的温度下快速热处理结5秒(约10分钟),使氧重新分布在隧道势垒中,并使隧道势垒与磁性层之间的界面均匀。通过快速的热退火可以改善磁性隧道结的隧道磁阻和热稳定性。 <图像>

著录项

  • 公开/公告号KR100407907B1

    专利类型

  • 公开/公告日2003-12-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010026486

  • 申请日2001-05-15

  • 分类号G11B5/39;

  • 国家 KR

  • 入库时间 2022-08-21 22:50:30

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