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METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
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机译:碳化硅金属氧化物半导体场效应晶体管中提高反型层迁移率的方法
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摘要
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.
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