METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE TO RESTRICT DISLOCATION

摘要

PURPOSE: A method for fabricating a gallium nitride substrate is provided to reduce a junction area between a sapphire substrate and a chemical compound semiconductor by forming a gallium nitride layer having a void on the sapphire substrate. CONSTITUTION: A gallium nitride buffer layer having a void is grown according to the first reaction volume ratio of gallium and nitrogen on a sapphire substrate under the first temperature. The first gallium nitride layer is grown according to the second reaction volume ratio of gallium and nitrogen on the sapphire substrate under the second temperature. The second temperature is higher than the first temperature. The second gallium nitride layer is grown according to the third reaction volume ratio of gallium and nitrogen on the sapphire substrate under the second temperature.