首页> 外国专利> MOTOR DRIVING CONTROL CIRCUIT OF ELECTRIC POWER STEERING SYSTEM FOR ARM SHORT PREVENTION CAPABLE OF AVOIDING DAMAGES OF FET AND ECU

MOTOR DRIVING CONTROL CIRCUIT OF ELECTRIC POWER STEERING SYSTEM FOR ARM SHORT PREVENTION CAPABLE OF AVOIDING DAMAGES OF FET AND ECU

机译:避免FET和ECU损坏的防止手臂短路的电力转向系统的电动机驱动控制电路。

摘要

PURPOSE: A motor driving control circuit is provided to prevent damages of FET and ECU by preventing an arm short phenomenon caused due to erroneous operations of main control unit and motor driver IC. CONSTITUTION: A motor driving control circuit comprises a first arm short prevention unit(11) and a second arm short prevention unit(12). The first arm short prevention unit includes a first Zener diode(ZD1) connected in a reverse direction to the gate terminal of a first FET(Q1) in an H-bridge circuit such that the first Zener diode turns on when the high signal having a voltage higher than a predetermined voltage is input; and a first transistor(TR1) having a base terminal connected to the first Zener diode, and a collector terminal connected to the gate terminal of a third FET(Q3) such that the first transistor turns on by the base current which is input when the first Zener diode is turned on. The second arm short prevention unit includes a second Zener diode(ZD2) connected in a reverse direction to the gate terminal of a second FET(Q2) in the H-bridge circuit such that the second Zener diode turns on when the high signal having a voltage higher than a predetermined voltage is input; and a second transistor(TR2) having a base terminal connected to the second Zener diode, and a collector terminal connected to the gate terminal of a fourth FET(Q4) such that the second transistor turns on by the base current which is input when the second Zener diode is turned on.
机译:目的:提供了一个电动机驱动控制电路,通过防止由于主控制单元和电动机驱动器IC的错误操作而引起的臂短路现象,来防止FET和ECU损坏。构成:电动机驱动控制电路包括第一防臂短路单元(11)和第二防臂短路单元(12)。第一臂短路防止单元包括第一齐纳二极管(ZD1),该第一齐纳二极管(ZD1)反向连接到H桥电路中的第一FET(Q1)的栅极端,从而当具有输入高于预定电压的电压;第一晶体管(TR1)的基极端子连接到第一齐纳二极管,并且集电极端子连接到第三FET(Q3)的栅极,使得第一晶体管通过基极电流导通。首先齐纳二极管导通。第二臂短路防止单元包括第二齐纳二极管(ZD2),该第二齐纳二极管(ZD2)反向连接到H桥电路中的第二FET(Q2)的栅极端子,从而当具有输入高于预定电压的电压;第二晶体管(TR2)的基极端子连接到第二齐纳二极管,集电极端子连接到第四FET(Q4)的栅极,使得第二晶体管通过基极电流导通。第二个齐纳二极管导通。

著录项

  • 公开/公告号KR20040088613A

    专利类型

  • 公开/公告日2004-10-20

    原文格式PDF

  • 申请/专利权人 MANDO CORPORATION;

    申请/专利号KR20030022528

  • 发明设计人 OH HUI SEOK;

    申请日2003-04-10

  • 分类号H02H7/122;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:48

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