METHOD OF FORMING LOW-DIELECTRIC-CONSTANT FILM, AND SEMICONDUCTOR SUBSTRATE WITH LOW-DIELECTRIC-CONSTANT FILM

摘要

The invention (a) low dielectric constant of the silica having - applying a coating liquid for forming a containing film on the semiconductor substrate, (b) heating the coated film at 50 to 350 ℃, and (c) the processed film provides a method for continuously forming a containing film-silica in a gas atmosphere in a semiconductor substrate comprising retention at 350 to 450 ℃ having a low dielectric constant of 3 or lower - 500 to 15,000 ppm by volume of an inert oxygen-containing and also the silica formed by the above method - providing a semiconductor substrate having a containing film.; The thermal treatment step (b) is preferably carried out at 150 to 350 ℃ for 1 to 3 minutes in an air atmosphere. Further, the retention step (c) is preferably carried out by placing the semiconductor substrate on a hot plate maintained at 350 to 450 ℃.; According to the invention, without causing any damage to the metal wire arranged on the substrate 3 or a low dielectric constant, low moisture adsorptivity and high film of silica having a strength characteristic of-the semiconductor substrate coated with a containing film can be consistently obtained.