Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit

摘要

Only a single individual layer (2) is applied finally on the photosensitive area of the circuit, being the last layer of a passivation system (3; 2) sealing-off the integrated circuit. This layer (2) has a given optical thickness (d) for high transmission. (Optical thickness is defined thickness multiplied by refractive index). An Independent claim is included for the corresponding method of manufacture.