Procedure for determining a characteristic of a semiconductor sample, involves lighting up a surface of the semiconductor sample at the same time with overlaid energizing light source such as a laser of a specific wavelengths

摘要

The method involves lighting up the surface of the sample with energizing light source such as a laser of specific wavelength. Next, modulating the light source of the different wavelengths with the same frequency but with different phases, and selecting the modulation functions and phases in such a manner, that the sum of the photon flux of all light bundles always lies within a fluctuation range, and the sum of the fluctuation range is smaller than the sum of all fluxes. Next, simultaneous phase-dependent measuring of the components of the surface photoelectric voltage caused by the different light sources, and determining the characteristic of the semiconductor sample from the connections between the components and the associated wavelengths.