Semiconductor memory device for electronic equipment, has memory cell array divided into blocks and control circuit selectively controlling wordline control circuit to activate wordlines with same row address to change page length

摘要

The device has a memory cell array (200) divided into memory blocks (110, 120, 130, 140), where each block is addressable by a block address e.g. column block address. Wordline control circuits are associated with the blocks for activating a wordline of the associated block. A control circuit (250) selectively controls the wordline circuits to activate the wordlines having same row address to change page length of device. Independent claims are also included for the following: (a) a memory system (b) a method for changing a page length of a semiconductor memory device.