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SINGLE-MODE LASER DIODE USING STRAIN COMPENSATED MULTIPLE QUANTUM WELL AND ITS MANUFACTURING METHOD

机译:应变补偿多量子阱的单模激光二极管及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a single-mode laser diode using a strain compensated multiple quantum well, and to provide its manufacturing method.;SOLUTION: A single-mode laser diode is provided with a substrate; an n-type coating layer that is formed on the substrate to prevent loss of generated light; an n-type SCH layer that is formed on the n-type coating layer to confine the generated light; a multiple quantum well that is formed on the n-type SCH layer to generate light; a p-type SCH layer that is formed on the multiple quantum well to confine the generated light; a p-type coating layer that is formed on the p-type SCH layer to prevent loss of the generated light; an ohmic layer that is formed on the p-type coating layer to control ohmic contacts; and an electrode for injecting the electric current generating light to the multiple quantum well. In the single-mode laser diode and its manufacturing method, multiple quantum well is provided with strains compensated by a plurality of compressive strain well layers and a plurality of tensile strain barrier layers that are formed alternately by preset stacking periods.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种使用应变补偿多量子阱的单模激光二极管,并提供其制造方法。为了防止所产生的光的损失,在基板上形成n型涂层。 n型SCH层,形成在n型涂层上以限制产生的光;形成在n型SCH层上以产生光的多量子阱;在多量子阱上形成以限制产生的光的p型SCH层;为了防止所产生的光的损失,在p型SCH层上形成有p型涂层。形成在p型涂层上以控制欧姆接触的欧姆层;电极,用于将产生光的电流注入到多量子阱中。在单模激光二极管及其制造方法中,多量子阱具有由多个压缩应变阱层和多个拉伸应变阻挡层补偿的应变,这些压缩应变阱层和多个拉伸应变阻挡层通过预设堆叠时间交替形成。 )2005,日本特许厅

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