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Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes

机译：应变补偿多量子阱630 nm波段AlGaInP激光二极管

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Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90/spl deg/C were achieved.

机译：仅提供摘要表格。首次研究了应变补偿的多量子阱630 nm波段AlGaInP激光二极管。最低的阈值电流为33 mA，最高的最高工作温度为90 / spl deg / C。

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《》|1994年|P.205-206|共2页
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Hiroyama; R.; Bessho; Y.;
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中图分类无线电电子学、电信技术;
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专利

1. Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes [J] . Man-Fang HUANG, Yu-Lung SUN Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：应变补偿多量子阱AlGaInP激光二极管的势垒结构优化
2. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates [J] . Hamada H., Hiroyama R. IEEE Journal of Quantum Electronics . 1993,第6期

机译：AlGaInP应变多量子阱可见激光二极管（λ/ sub L />或= 630 nm波段），在取向错误的衬底上生长有多量子势垒
3. Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer [J] . Honda S., Miyake T. Electronics Letters . 2000,第15期

机译：具有应变补偿MQW有源层的低阈值650 nm波段实际折射率引导的AlGaInP激光二极管
4. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes [C] . Hiroyama R., Bessho Y., Institute of Electric and Electronic Engineer IEEE International Semiconductor Laser Conference . 1994

机译：应变补偿多量子阱630-NM波段AlgainP激光二极管
5. Design, analysis and fabrication technology for 1.55 micron strained and strain-compensated multiple quantum well single frequency lasers. [D] . Lin, Chih-Hsien. 1996

机译：1.55微米应变和应变补偿多量子阱单频激光器的设计，分析和制造技术。
6. Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells [O] . Wenjie Wang, Wuze Xie, Zejia Deng, 2019

机译：使用非对称In0.15Ga0.85N / In0.02Ga0.98N多量子阱提高InGaN激光二极管的输出功率
7. Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes [O] . P. H. Lei 2012

机译：n型调制掺杂势垒和线性梯度成分GaInAsP中间层对1.3μmAlGaInAs / AlGaInAs应变补偿多量子阱激光二极管的影响
8. Efficient Cr,Nd:Gd3Sc2Ga3O12 Laser at 1.06 microns Pumped by VisibleGaInP/AlGaInP Laser Diodes [R] . Scheps, R. 1991

机译：VisibleGaInp / alGaInp激光二极管泵浦1.06微米的高效Cr，Nd：Gd3sc2Ga3O12激光器

Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes

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