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Design, analysis and fabrication technology for 1.55 micron strained and strain-compensated multiple quantum well single frequency lasers.

机译:1.55微米应变和应变补偿多量子阱单频激光器的设计,分析和制造技术。

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摘要

High performance 1.55 {dollar}mu{dollar}m strained quantum well single frequency lasers are desirable light sources for long-distance communication systems including wavelength division multiplexing (WDM) systems. Two types of most intensively studied single frequency lasers are vertical-cavity surface-emitting lasers (VCSELs) and distributed feedback (DFB) lasers. In this work, we investigate methods to improve the performance of 1.55 {dollar}mu{dollar}m VCSELs, and techniques for low cost fabrication of DFB lasers.; Since strained quantum wells have been extensively used to enhance the performance of 1.55 {dollar}mu{dollar}m lasers, there is a need for a model that depicts device parameters including quantum well width, optical gain and differential gain. Such a model was developed by establishing a set of empirical formulas that agree well with the first principle calculations based on the multi-band effective mass theory. The injection efficiency, and high speed properties in multiple quantum well (MQW) lasers have also been studied using a carrier diffusion model. These empirical formulas are useful for device design and optimization, and the carrier transport study suggests a graded p-doping profile with a characteristic length equal to one half of the ambipolar diffusion length for the best pumping efficiency and signal modulation bandwidth.; To improve the performance of long wavelength VCSELs, strain-compensated MQWs (SC-MQWs) as gain medium are proposed and analyzed in detail. The photopumped long wavelength SC-MQW VCSELs were fabricated and tested. A very low equivalent threshold current density of 2 kA/cm{dollar}sp2{dollar} and a high characteristic temperature of 90 K have been obtained with 98% reflectivity dielectric mirrors. The experimental data shows that threshold and characteristic temperature are greatly improved for a VCSEL with SC-MQWs as gain medium. This result agrees with what the theoretical study predicted.; A new method of fabricating submicron gratings for low-cost DFB lasers and laser arrays from a glass mask is developed and demonstrated. Second-order gratings (0.5 {dollar}mu{dollar}m period) for 1.55 {dollar}mu{dollar}m DFB lasers were fabricated as a proof of principle. This method is more cost effective than E-beam lithography and more insensitive to environmental changes than conventional free space holography. Compared with the existing phase mask techniques, this method is more flexible in the requirement of mask. By offsetting the grating periods on the glass mask, one can achieve multiple-period gratings with a sub-A period spacing for DFB laser arrays using purely optical sources. Four sections of gratings for a four-channel 1.55 {dollar}mu{dollar}m DFB laser array with a channel spacing of 6 A have been fabricated. The periods and spacing of the fabricated gratings agree with the designed values very well. This unique application makes this method particularly attractive for advanced WDM devices.
机译:高性能1.55微米应变量子阱单频激光器是用于包括波分复用(WDM)系统的长距离通信系统的理想光源。研究最多的两种类型的单频激光器是垂直腔面发射激光器(VCSEL)和分布式反馈(DFB)激光器。在这项工作中,我们研究了改善1.55微米VCSEL性能的方法,以及低成本制造DFB激光器的技术。由于应变量子阱已被广泛用于增强1.55μm激光器的性能,因此需要一种模型来描述包括量子阱宽度,光学增益和差分增益在内的器件参数。通过建立一组与基于多频带有效质量理论的第一原理计算非常吻合的经验公式来开发这种模型。还使用载流子扩散模型研究了多量子阱(MQW)激光器的注入效率和高速特性。这些经验公式可用于器件设计和优化,并且载流子传输研究表明,梯度p掺杂分布的特征长度等于双极性扩散长度的一半,以获得最佳的泵浦效率和信号调制带宽。为了提高长波长VCSEL的性能,提出并详细分析了应变补偿MQW(SC-MQW)作为增益介质。制作并测试了光泵浦长波长SC-MQW VCSEL。使用98%反射率的介电镜已经获得了非常低的等效阈值电流密度2 kA / cm {dol}} sp2 {dol}和90 K的高特征温度。实验数据表明,对于以SC-MQWs为增益介质的VCSEL,阈值和特征温度得到了极大的改善。该结果与理论研究的预测相符。开发并展示了一种新的从玻璃掩模制造低成本DFB激光器和激光器阵列的亚微米光栅的方法。作为原理的证明,制造了1.55微米μmDFB激光器的二阶光栅(周期为0.5微米)。该方法比电子束光刻更具成本效益,比传统的自由空间全息术对环境变化更不敏感。与现有的相位掩模技术相比,该方法在掩模要求上更加灵活。通过补偿玻璃掩模上的光栅周期,可以使用纯光源实现DFB激光阵列具有亚A周期间隔的多周期光栅。已经制造出具有6A的通道间隔的四通道1.55μmμmDFB激光器阵列的四部分光栅。制成的光栅的周期和间距与设计值非常吻合。这种独特的应用使该方法对高级WDM设备特别有吸引力。

著录项

  • 作者

    Lin, Chih-Hsien.;

  • 作者单位

    Cornell University.;

  • 授予单位 Cornell University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1996
  • 页码 188 p.
  • 总页数 188
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:49:14

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