STENCIL MASK, METHOD OF TRANSFERRING ALIGNMENT MARK, AND METHOD OF MANUFACTURING STENCIL MASK

摘要

PROBLEM TO BE SOLVED: To provide a stencil mask which suppresses distortion caused by formation of an alignment pattern for transfer, in the stencil mask in which the alignment pattern for transfer constituted of an aperture is formed, and to provide the method of manufacturing the stencil mask.;SOLUTION: A stencil mask comprises an alignment pattern for transfer 8 which is constituted of a plurality of apertures for passing an electrically-charged particle therethrough, and transfers an alignment mark for use in the detection of the position of a substrate to the substrate. The alignment pattern for transfer 8 is constituted of an aperture 9, and an aperture 10 of substantially identical rectangular shape as constituent patterns for constituting the alignment pattern for transfer 8. With regard to any rectangular constituent patterns, a long side length 11 is limited to be equal to or less than a predetermined value. For a predetermined length, 50 μm is suitable. Additionally, the predetermined value is determined according to the degree of distortion caused in the stencil mask.;COPYRIGHT: (C)2005,JPO&NCIPI